Patterned substrate for gallium nitride-based light emitting diode and the light emitting diode using the same
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United States of America Patent
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Feb 20, 2018
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app pub date -
Oct 27, 2015
filing date -
Apr 23, 2015
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Abstract
The present invention provides a patterned substrate for gallium nitride-based light emitting diode, comprising: a patterned substrate having patterns, wherein the plurality of patterns are circle type having diameters (d) and the distances between the centers of the patterns are pitches (p), and the cross sections of the patterns are extruded shapes and have heights (h), and wherein the value of [diameter (d)/pitch (p)] is larger than (2.6)/3, and equal or smaller than 3/3.
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