Extended drain metal-oxide-semiconductor transistor
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United States of America Patent
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Feb 20, 2018
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N/A
app pub date -
May 20, 2016
filing date -
May 21, 2015
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Abstract
Devices and methods for forming a device are disclosed. A substrate is provided. A first body well of a second polarity type is formed in the substrate. A second body well of the second polarity type is formed in the first body well. A bottom of the second body well and a bottom of the first body well are contiguous. Dopant concentrations of the first and second body wells include a graded profile. A transistor of a first polarity type is formed over the substrate. The transistor includes a source and a drain. The source is formed in the second body well.
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