Integrated circuit comprising components, for example NMOS transistors, having active regions with relaxed compressive stresses
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United States of America Patent
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Feb 20, 2018
Issued Date -
N/A
app pub date -
Nov 30, 2015
filing date -
Feb 28, 2014
priority date (Note) -
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status (Latency Note)
Importance
Abstract
An integrated circuit includes a substrate and at least one component unfavorably sensitive to compressive stress which is arranged at least partially within an active region of the substrate limited by an insulating region. To address compressive stress in the active region, the circuit further includes at least one electrically inactive trench located at least in the insulating region and containing an internal area configured to reduce compressive stress in the active region. The internal area is filled with polysilicon. The polysilicon filled trench may further extend through the insulating region and into the substrate.
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