Nanotube semiconductor devices
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United States of America Patent
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Feb 20, 2018
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N/A
app pub date -
Jun 8, 2017
filing date -
Jun 12, 2009
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Abstract
Semiconductor devices includes a thin epitaxial layer (nanotube) formed on sidewalls of mesas formed in a semiconductor layer. In one embodiment, a semiconductor device includes a first semiconductor layer, a second semiconductor layer formed thereon and of the opposite conductivity type, and a first epitaxial layer formed on mesas of the second semiconductor layer. An electric field along a length of the first epitaxial layer is uniformly distributed.
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