Image sensor and related fabrication method
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United States of America Patent
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Feb 20, 2018
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N/A
app pub date -
Oct 26, 2016
filing date -
Aug 4, 2016
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Abstract
An image sensor includes a semiconductor substrate with at least one recess disposed on its surface and in the photosensitive area defined on the surface of the semiconductor substrate, a first-conductivity-type doped region disposed in the semiconductor substrate and in the photosensitive area, and a second-conductivity-type doped region disposed on the surface of the first-conductivity-type doped region and on the surface of the recess. A photosensitive device of the image sensor is formed of the first-conductivity-type doped region and the second-conductivity-type doped region.
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