Silicon precursor, method of forming a layer using the same, and method of fabricating semiconductor device using the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 20, 2018
Issued Date -
N/A
app pub date -
Jul 29, 2016
filing date -
Apr 16, 2014
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The inventive concepts provide silicon precursors, methods of forming a layer using the same, and methods of fabricating a semiconductor device using the same. The silicon precursor includes a silane group including two or more silicon atoms. The silicon precursor has a high and uniform adsorption property on surfaces of layers (e.g., a silicon layer, an oxide layer, and a nitride layer) that are mainly used when semiconductor devices are fabricated.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully