Wiring for semiconductor device and method of forming same
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United States of America Patent
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Feb 20, 2018
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N/A
app pub date -
Apr 24, 2014
filing date -
Apr 25, 2013
priority date (Note) -
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Abstract
A method for forming a wiring for a semiconductor device according to an aspect of the present invention includes: forming a predetermined pattern on a first surface of a silicon substrate by selectively etching the first surface; coating, with a metal layer, a selected area of the first surface, including an area whereat the predetermined pattern is formed; forming organic material in the first surface to fill an etched portion and cover the coated metal layer; forming a plurality of via holes in the organic material and connecting the metal wiring to the coated metal layer through the via holes; and grinding a second surface corresponding to the first surface to remove a part of the metal layer formed in the etched portion.
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