Apparatus and method for bonding substrates including changing a stoichiometry of oxide layers formed on the substrates
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United States of America Patent
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Feb 20, 2018
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app pub date -
Sep 25, 2013
filing date -
Sep 25, 2013
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Abstract
A device and method for producing an electrically conductive direct bond between a bonding side of a first substrate and a bonding side of a second substrate with the following features: a workspace that can be closed, gas-tight, against the environment and can be supplied with a vacuum, the workspace comprises: a) at least one plasma chamber for modifying at least one of the bonding sides and at least one bonding chamber for bonding the bonding sides, and/or b) at least one combined bonding/plasma chamber for modifying at least one of the bonding sides and for bonding the bonding sides.
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