Method for writing into and reading a multi-levels EEPROM and corresponding memory device
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United States of America Patent
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Feb 20, 2018
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N/A
app pub date -
May 30, 2017
filing date -
Oct 25, 2013
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Abstract
During a phase of programming the cell, a first voltage is applied to the source region and a second voltage, higher than the first voltage, is applied to the drain region until the cell is put into conduction. The numerical value of the item of data to be written is controlled by the level of the control voltage applied to the control gate and the item of data is de facto written with the numerical value during the putting into conduction of the cell. The programming is then stopped.
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