Halftone phase shift photomask blank, making method, and halftone phase shift photomask
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United States of America Patent
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Feb 20, 2018
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app pub date -
Aug 9, 2016
filing date -
Aug 31, 2015
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Abstract
A halftone phase shift photomask blank is provided comprising a transparent substrate and a halftone phase shift film thereon having a phase shift of 150-200° and a transmittance of 9-40%. The halftone phase shift film consists of a transition metal, Si, O and N, has an average transition metal content of at least 3 at %, and is composed of a plurality of layers including a stress relaxation layer having an oxygen content of at least 3 at % and a phase shift adjusting layer having a higher oxygen content of at least 5 at %.
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