Treating a capping layer of a mask

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United States of America Patent

PATENT NO 9897910
SERIAL NO

15395784

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Abstract

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A method for forming a lithography mask includes forming a capping layer on a reflective multilayer layer, the capping layer comprising a first material, forming a patterned patterning layer on the capping layer, and introducing a secondary material into the capping layer, the secondary material having an atomic number that is smaller than 15.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Wei-Shiuan Hsin-Chu, TW 2 4
Hsu, Pei-Cheng Taipei, TW 111 530
Lee, Hsin-Chang Zhubei, TW 203 1090
Lien, Ta-Cheng Hsinchu County, TW 104 198
Lin, Chih-Cheng Kaohsiung, TW 79 292
Yen, Anthony Hsinchu, TW 157 3414

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