Magnetoresistive structure having two dielectric layers, and method of manufacturing same
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United States of America Patent
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Feb 13, 2018
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Jan 2, 2017
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Sep 30, 2011
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Abstract
A magnetoresistive structure having two dielectric layers, and method of manufacturing same, includes a free magnetic layer positioned between the two dielectric layers. The method of manufacture comprises at least two etch processes and at least one encapsulation process interposed therebetween wherein the encapsulation is formed on sidewalls of the partially formed magnetoresistive stack between etch processes.
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