Structure of high temperature resistant reflecting layer of light-emitting diode
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United States of America Patent
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Feb 13, 2018
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app pub date -
Apr 20, 2017
filing date -
Apr 20, 2017
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Abstract
A structure is presented as a laminar structure having a first electrode, light-emitting diode epitaxial layer, silver reflecting layer, current barrier layer, metallic buffer layer, bonding layer, substrate and second electrode in turn, the silver reflecting layer covering the light-emitting diode epitaxial layer and having a bare region distributed as a pattern, the bare region being filled with a high temperature enduring reflecting material, the current barrier layer being patterned to be distributed over the silver reflecting layer in correspondence with the bare region, the metallic buffer layer separating the current barrier layer while covering the silver reflecting layer, whereby high temperature generated by the current barrier layer is sustained by the reflecting material to prevent the silver reflecting layer from cracking when being contacted with the high temperature of the current barrier layer and then ensure luminous efficiency of the light-emitting diode. Thus, the usage requirement is fulfilled.
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