Light emitting diode and manufacturing method therefor
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United States of America Patent
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Feb 13, 2018
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N/A
app pub date -
Sep 16, 2014
filing date -
Mar 25, 2014
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Abstract
A light emitting diode and a manufacturing method therefore are provided. The light emitting diode includes at least: a first light emitting structure, formed on a substrate, in which a first n-GaN layer, a first active layer and a first p-GaN layer are sequentially layered; a first n-type electrode formed on one side of the upper part of the first n-GaN layer; a current diffusion layer, formed on the first light emitting structure, in which at least one hole is arranged; and a second light emitting structure in which a second p-GaN layer, which is formed in a region of a conductive layer in which at least one hole is arranged, and a second active layer and a second n-GaN layer, which are formed on the second p-GaN layer, are sequentially layered.
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