Semiconductor structure with template for transition metal dichalcogenides channel material growth
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United States of America Patent
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Feb 13, 2018
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app pub date -
May 4, 2016
filing date -
Jul 9, 2014
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Abstract
A semiconductor structure includes a substrate, a buffer layer, and a two-dimensional layered material. The buffer layer is above the substrate and is formed from one of SiC and a nitride-based material. The two-dimensional layered material is above the buffer material. The construction as such permits formation, e.g., of a channel of a transistor from the two-dimensional layered material.
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