Split gate semiconductor device with curved gate oxide profile
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United States of America Patent
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Feb 13, 2018
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N/A
app pub date -
Aug 15, 2016
filing date -
Oct 21, 2009
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Abstract
A split gate semiconductor device includes a trench gate having a first electrode region and a second electrode region that are separated from each other by a gate oxide layer and an adjacent dielectric layer. The boundary of the gate oxide layer and the dielectric layer is curved to avoid a sharp corner where the gate oxide layer meets the sidewalls of the trench.
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