Method for fabricating a transistor device with a tuned dopant profile
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United States of America Patent
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Feb 13, 2018
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app pub date -
Oct 4, 2016
filing date -
Mar 14, 2013
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Abstract
A transistor device with a tuned dopant profile is fabricated by implanting one or more dopant migrating mitigating material such as carbon. The process conditions for the carbon implant are selected to achieve a desired peak location and height of the dopant profile for each dopant implant, such as boron. Different transistor devices with similar boron implants may be fabricated with different peak locations and heights for their respective dopant profiles by tailoring the carbon implant energy to effect tuned dopant profiles for the boron.
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