Lateral DMOS and the method for forming thereof
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United States of America Patent
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Feb 13, 2018
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N/A
app pub date -
Oct 4, 2016
filing date -
Oct 4, 2016
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Abstract
A lateral DMOS device with peak electric field moved below a top surface of the device along a body-drain junction is introduced. The LDMOS has a deep body and a drift region formed by a series of P-type and N-type implants, respectively. The implant doses and depths are tuned so that the highest concentration gradient of the body-drift junction is formed below the surface, which suppresses the injection and trapping of hot holes in the device drain-gate oxide region vicinity, and the associated device performance changes, during operation in breakdown.
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