Power semiconductor module and method for manufacturing the same
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United States of America Patent
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Feb 13, 2018
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app pub date -
Aug 23, 2016
filing date -
Mar 30, 2016
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Abstract
A power semiconductor module includes: a substrate including first, second, and third metal patterns separated from each other, a semiconductor element located on the substrate, a lead frame located on the substrate and including first, second, third, and fourth bodies; a first terminal connected to the first body, a second terminal connected to the second body, and a third common terminal that connects the third body and the fourth body, wherein a length of the third common terminal is longer than that of the first and second terminals.
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