Chemistries for TSV/MEMS/power device etching

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United States of America Patent

PATENT NO 9892932
SERIAL NO

15316932

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Abstract

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Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1 ≦x<7, 1≦y≦13, and 1≦z≦13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

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Patent Owner(s)

Patent OwnerAddress
AMERICAN AIR LIQUIDE INC46409 LANDING PARKWAY FREMONT CA 94538

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Anderson, Curtis Downingtown, US 31 491
Dussarrat, Christian Tokyo, JP 139 7373
Gupta, Rahul St. Louis, US 252 4566
Omarjee, Vincent M Grenoble, FR 29 485
Shen, Peng Tsukuba, JP 43 200
Stafford, Nathan Damascus, US 40 432

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