Pattern forming method
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United States of America Patent
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Feb 13, 2018
Issued Date -
N/A
app pub date -
Jan 19, 2016
filing date -
Jul 24, 2013
priority date (Note) -
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status (Latency Note)
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Abstract
A pattern-forming method includes applying an inorganic film-forming composition on an upper face side of a substrate to provide an inorganic film, forming a resist pattern on an upper face side of the inorganic film; and dry-etching once or several times using the resist pattern as a mask such that the substrate has a pattern The inorganic film-forming composition includes a polyacid or a salt thereof, and an organic solvent. The step for forming a resist pattern may include the steps of: applying a resist composition on an upper face side of the inorganic film to provide a resist film; exposing the resist film; and developing the resist film exposed.
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