Monolithic integrated lattice mismatched crystal template and preparation method thereof

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United States of America Patent

PATENT NO 9890472
SERIAL NO

14362130

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Abstract

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The present invention provides a monolithic integrated lattice mismatched crystal template and a preparation method thereof by using low-viscosity material, the preparation method for the crystal template includes: providing a first crystal layer with a first lattice constant; growing a buffer layer on the first crystal layer; below the melting point of the buffer layer, growing a second crystal layer and a template layer by sequentially performing the growth process of a second crystal layer and the growth process of a first template layer on the buffer layer, or growing a template layer by directly performing a first template layer growth process on the buffer layer; melting and converting the buffer layer to an amorphous state, performing a second template layer growth process on the template layer grown by the first template layer growth process at the growth temperature above the glass transition temperature of the buffer layer, sequentially growing a template layer until the lattice of the template layer is fully relaxed. Compared to the prior art, the invention has advantages of simple preparation, achieving in various lattice constant material combinations on one substrate and low dislocation density, high crystal quality.

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Patent Owner(s)

Patent OwnerAddress
SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES200050 NO 865 CHANGNING ROAD SHANGHAI CHANGNING DISTRICT SHANGHAI CITY SHANGHAI CITY 200050

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Wang, Shumin Shanghai, CN 63 1297

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