Microwave plasma reactors
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United States of America Patent
Stats
-
Feb 13, 2018
Issued Date -
N/A
app pub date -
May 11, 2012
filing date -
Jun 16, 2008
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed reactors operate at high pressures (>180-320 Torr) and high power densities (>150 W/cm3), and thereby enable high deposition rate CVD processes that rapidly deposit materials. In particular, reactor design examples are described that, when operating in the 180-320 Torr pressure regime, rapidly CVD synthesize high quality polycrystalline (PCD) and single crystal diamond (SCD). The improved reactors include a radial contraction in the vicinity of the plasma chamber (and optionally a combined expansion in the vicinity of the electromagnetic wave source, followed by the contraction) in the main microwave chamber as electromagnetic energy propagates from an electromagnetic wave source to a plasma/deposition chamber.
First Claim
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International Classification(s)
- 2012 Application Filing Year
- C23C Class
- 1946 Applications Filed
- 1591 Patents Issued To-Date
- 81.76 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 0 Citation Count
- C23C Class
- 0 % this patent is cited more than
- 7 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Aug 13, 2025 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Aug 13, 2029 |
