Method for recovering and purifying argon gas from silicon single crystal manufacturing apparatus and apparatus for recovering and purifying argon gas

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United States of America Patent

PATENT NO 9890044
APP PUB NO 20160325996A1
SERIAL NO

15109380

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Abstract

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An argon gas recovering and purifying method including: introducing waste argon gas containing nitrogen, oxygen, and carbon monoxide from silicon single crystal manufacturing apparatus into waste argon gas storage tank; removing solid matters in pretreatment facility which removes the solid matters in waste argon gas; converting oxygen into water and converting carbon monoxide into carbon dioxide by catalytic reaction; removing the water, the carbon dioxide, and the nitrogen to obtain recovered gas, in the argon gas recovering and purifying method and an argon gas recovering and purifying apparatus, the catalytic reaction is carried out with compression heat alone by arranging a catalyst in a two-stage compressor, and the water is removed by a dryer in advance and then the nitrogen and the carbon dioxide are adsorbed and removed in an ordinary-temperature adsorption tower at the step of obtaining the recovered gas.

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Patent Owner(s)

Patent OwnerAddress
SHIN-ETSU HANDOTAI CO LTD2-1 OHTEMACHI 2-CHOME CHIYODA-KU TOKYO 1000004

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Matsushima, Hideaki Nasushiobara, JP 56 601
Onozawa, Ichiro Annaka, JP 1 1
Yajima, Wataru Nishigo-mura, JP 3 1

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