Doped substrate regions in MEMS microphones
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United States of America Patent
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Feb 6, 2018
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N/A
app pub date -
Mar 31, 2015
filing date -
Apr 1, 2014
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Abstract
Systems and methods for preventing electrical leakage in a MEMS microphone. In one embodiment, the MEMS microphone includes a semiconductor substrate, an electrode, a first insulation layer, and a doped region. The first insulation layer is formed between the electrode and the semiconductor substrate. The doped region is implanted in at least a portion of the semiconductor substrate where the semiconductor substrate is in contact with the first insulation layer. The doped region is also electrically coupled to the electrode.
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