MTJ etching with improved uniformity and profile by adding passivation step
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United States of America Patent
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Feb 6, 2018
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N/A
app pub date -
May 31, 2015
filing date -
May 31, 2015
priority date (Note) -
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Abstract
A hard mask stack for etching a magnetic tunneling junction (MTJ) structure is described. An electrode layer is deposited on a stack of MTJ layers on a bottom electrode. A photoresist mask is formed on the electrode layer. The electrode layer is etched away where it is not covered by the photoresist mask to form a metal hard mask. The metal hard mask is passivated during or after etching to form a smooth hard mask profile. Thereafter, the photoresist mask is removed and the MTJ structure is etched using the metal hard mask wherein the metal hard mask remaining acts as a top electrode. The resulting MTJ device has smooth sidewalls and uniform device shape.
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