Semiconductor layered structure, method for producing semiconductor layered structure, and method for producing semiconductor device
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United States of America Patent
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Feb 6, 2018
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Jan 19, 2015
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Feb 5, 2014
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Abstract
A semiconductor layered structure includes a substrate formed of a III-V compound semiconductor, a buffer layer disposed on and in contact with the substrate and formed of a III-V compound semiconductor, and a quantum well layer disposed on and in contact with the buffer layer and including a plurality of component layers formed of III-V compound semiconductors. The substrate has a diameter of 55 mm or more. At least one of the component layers is formed of a mixed crystal of three or more elements. When the compound semiconductor forming the substrate has a lattice constant d1, the compound semiconductor forming the buffer layer has a lattice constant d2, and the compound semiconductors forming the quantum well layer have an average lattice constant d3, (d2−d1)/d1 is −3×10−3 or more and 3×10−3 or less, and (d3−d1)/d1 is −3×10−3 or more and 3×10−3 or less.
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