Normally-off field effect transistor
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United States of America Patent
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Feb 6, 2018
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N/A
app pub date -
Aug 11, 2016
filing date -
Aug 11, 2015
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Abstract
A normally-off transistor with a high operating voltage is provided. The transistor can include a barrier above the channel and an additional barrier layer located below the channel. A source electrode and a drain electrode are connected to the channel and a gate electrode is connected to the additional barrier layer located below the channel. The bandgap for each of the barrier layers can be larger than the bandgap for the channel. A polarization charge induced at the interface between the additional barrier layer below the channel and the channel depletes the channel. A voltage can be applied to the bottom barrier to induce free carriers into the channel and turn the channel on.
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