Modulated super junction power MOSFET devices

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United States of America Patent

PATENT NO 9887259
SERIAL NO

14659394

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Abstract

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A semiconductor device—e.g., a super junction power MOSFET—includes a number of columns of one type of dopant formed in a region of another type of dopant. Generally speaking, the columns are modulated in some manner. For example, the widths (e.g., diameters) of some columns are greater than the widths of other columns.

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Patent Owner(s)

Patent OwnerAddress
VISHAY-SILICONIX2201 LAURELWOOD ROAD SANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Pattanayak, Deva Saratoga, US 31 337
Tornblad, Olof San Jose, US 6 61

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