Circuit redistribution structure unit and method for manufacturing circuit redistribution structure

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United States of America Patent

PATENT NO 9887153
SERIAL NO

15257897

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method for manufacturing a circuit redistribution structure includes the following steps. A first dielectric is formed on a carrier. Conductive blind vias are formed in the first dielectric. A first circuit redistribution layer is formed on the first dielectric. A second dielectric is formed on the first dielectric. First and second holes are formed on the second dielectric. A trench is formed in the second dielectric to divide the second dielectric into first and second portions. A first portion of the first circuit redistribution layer and the first hole are disposed in the first portion of the second dielectric, and a second portion of the first circuit redistribution layer and the second hole are disposed in the second portion of the second dielectric. Conductive blind vias are formed in the first and second holes, and a second circuit redistribution layer is formed on the second dielectric.

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Patent Owner(s)

Patent OwnerAddress
UNIMICRON TECHNOLOGY CORPTAOYUAN 330

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Yu-Hua Hsinchu, TW 80 525
Ko, Cheng-Ta Taoyuan, TW 78 166

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