Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related method
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United States of America Patent
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Feb 6, 2018
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N/A
app pub date -
Oct 19, 2015
filing date -
Oct 24, 2014
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Abstract
A structure having isolated deep substrate vias with decreased pitch and increased aspect ratio is disclosed. The structure includes a device layer over a buried oxide layer, a deep trench extending through the device layer, a dielectric filler in the deep trench, via holes in the dielectric filler, and conductive fillers in the via holes being the isolated deep substrate vias. The dielectric filler may include silicon oxide. The conductive fillers may include tungsten or copper. An adjacent pair of the isolated deep substrate vias within the deep trench has a pitch equal to or less than 1.0 microns.
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