Method providing for asymmetric pupil configuration for an extreme ultraviolet lithography process
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United States of America Patent
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Feb 6, 2018
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app pub date -
Feb 10, 2016
filing date -
Feb 10, 2016
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Abstract
A pattern of features of an integrated circuit is provided. A configuration of a pupil of an extreme ultraviolet wavelength radiation beam (also referred to as an illumination mode), is selected. The selected configuration is an asymmetric, single pole configuration. At least one disparity is determined between a simulated imaging using the selected configuration and a designed imaging for the pattern of features. A parameter (also referred to as a compensation parameter) is then modified to address the at least one disparity, wherein the parameter at least one a design feature, a mask feature, and a lithography process parameter. A substrate is then exposed to the pattern of features using the selected configuration and the modified parameter.
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