Method for forming sputtering target
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United States of America Patent
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Feb 6, 2018
Grant Date -
Feb 13, 2014
app pub date -
Aug 1, 2013
filing date -
Aug 7, 2012
priority date (Note) -
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Abstract
To provide a sputtering target which enables an oxide film containing a plurality of metal elements and having high crystallinity. A plurality of raw materials are mixed and first baking is performed thereon, whereby a crystalline oxide is formed. The crystalline oxide is ground to form a crystalline oxide powder. The crystalline oxide powder is mixed with water and an organic substance to make slurry, and the slurry is poured into a mold provided with a filter. The water and the organic substance are removed from the slurry through the filter, so that a molded body is formed. The residual water and the residual organic substance in the molded body are removed, and then second baking is performed.
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