Method for continuously forming noble metal film and method for continuously manufacturing electronic component
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United States of America Patent
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Feb 6, 2018
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Nov 19, 2015
app pub date -
Dec 10, 2012
filing date -
Dec 27, 2011
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Abstract
The purpose of the present invention is to prevent a drop in secondary electron emission characteristics due to the inside wall of a chamber being covered by a noble metal film continuously formed by plasma sputtering, and so generate and maintain the plasma. After a noble metal film is formed on a given substrate and before a film is formed on a subsequent substrate, a secondary electron emission film comprising a material having a secondary electron emission coefficient higher than that of the noble metal is formed on the inner wall of the chamber.
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