SiC ingot slicing method
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United States of America Patent
Stats
-
Feb 6, 2018
Issued Date -
N/A
app pub date -
Sep 10, 2015
filing date -
Sep 16, 2014
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Disclosed herein is an SiC ingot slicing method including: an initial separation layer formation step for scanning a focal point of a laser beam parallel to an end face of the SiC ingot along a scheduled separation plane, and forming a separation layer at a position at a distance from the end face; a repetition step for sequentially moving, after the initial separation layer formation step, the focal point by the distance equal to the thickness of an SiC plate from the separation layer toward the end face, scanning the focal point parallel to the end face, repeating the formation of the separation layer, and forming the plurality of separation layers; and a separation step for applying an external force to the plurality of separation layers formed by the repetition step, peeling off the SiC plates starting from the separation layers, and acquiring the plurality of SiC plates.
First Claim
Other Claims data not available
Family
International Classification(s)
- 2015 Application Filing Year
- B28D Class
- 139 Applications Filed
- 101 Patents Issued To-Date
- 72.67 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 5 Citation Count
- B28D Class
- 29.41 % this patent is cited more than
- 7 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Aug 6, 2025 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Aug 6, 2029 |
