Nonvolatile resistance change element
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United States of America Patent
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Jan 30, 2018
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N/A
app pub date -
Jul 31, 2013
filing date -
Jun 2, 2011
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Abstract
According to one embodiment, a nonvolatile resistance change element includes a first electrode, a second electrode, a semiconductor layer and a first layer. The first electrode includes at least one of Ag, Ni, Co, Al, Zn, Ti, and Cu. The semiconductor layer is sandwiched between the first and second electrodes. The first layer is provided between the second electrode and the semiconductor layer and contains an element included in the semiconductor layer and at least one of Ag, Ni, and Co.
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