Etching method and substrate processing apparatus

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United States of America Patent

PATENT NO 9882124
SERIAL NO

14616863

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Abstract

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An etching method is provided for etching a multilayer film material that includes a metal laminated film having an insulating layer arranged between a first magnetic layer and a second magnetic layer. The etching method includes an etching step of generating a plasma by supplying a first gas to a processing chamber and etching the metal laminated film using the generated plasma. The first gas is a gas containing PF3 gas.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITEDTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nishimura, Eiichi Miyagi, JP 130 2991
Shimizu, Akitaka Miyagi, JP 62 1992
Yamashita, Fumiko Miyagi, JP 19 117

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