Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same
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United States of America Patent
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Jan 30, 2018
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Oct 24, 2016
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Dec 21, 2012
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Abstract
Perpendicular spin transfer torque memory (STTM) devices with enhanced stability and methods of fabricating perpendicular STTM devices with enhanced stability are described. For example, a material layer stack for a magnetic tunneling junction includes a fixed magnetic layer. A dielectric layer is disposed above the fixed magnetic layer. A free magnetic layer is disposed above the dielectric layer. A conductive oxide material layer is disposed on the free magnetic layer.
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