Magnetic memory devices including in-plane current layers
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United States of America Patent
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Jan 30, 2018
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Dec 2, 2015
filing date -
Dec 17, 2014
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Abstract
A magnetic memory device can include an upper electrode, a lower electrode and a Magnetic Tunnel Junction (MTJ). The MTJ can include a reference magnetic pattern configured to generate a fixed magnetization and a free magnetic pattern on the reference magnetic pattern configured to generate a switchable magnetization that switches direction between parallel and anti-parallel to the fixed magnetization. A metal pattern can be on the free magnetic pattern and can be configured to conduct an in-plane current and a perpendicular-to-plane to/from the upper electrode.
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