Wafer-level light emitting diode and wafer-level light emitting diode package
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United States of America Patent
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Jan 30, 2018
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app pub date -
Aug 25, 2016
filing date -
Sep 24, 2010
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Abstract
A light-emitting diode including a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers, wherein the second semiconductor layer and the active layer provide a contact region exposing the first semiconductor layer, a first bump arranged on a first side of the semiconductor stack and being electrically connected to the first semiconductor layer via the contact region, a second bump arranged on the first side of the semiconductor stack and being electrically connected to the second semiconductor layer, a first insulation layer disposed covering a side surface of the first bump, and a wavelength converter disposed on a second side of the semiconductor stack. The wavelength converter laterally extends beyond the semiconductor stack. The first insulation layer includes a side surface that is flush with a side surface of the wavelength converter.
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