Method for separating epitaxial layers from growth substrates, and semiconductor device using same

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United States of America Patent

PATENT NO 9882085
SERIAL NO

15040969

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Abstract

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The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.

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SEOUL VIOSYS CO LTDGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Joo Won Ansan-si, KR 19 168
Han, Yu Dae Ansan-si, KR 13 100
Heo, Jeong Hun Ansan-si, KR 14 80
Lee, A Ram Cha Ansan-si, KR 8 54
Lee, Choong Min Ansan-si, KR 8 40
Nam, Ki Bum Ansan-si, KR 56 525
Shin, Su Jin Ansan-si, KR 9 42

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