Light sensor with vertical diode junctions
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United States of America Patent
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Jan 30, 2018
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N/A
app pub date -
Mar 10, 2014
filing date -
Mar 15, 2013
priority date (Note) -
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Abstract
Light sensors are described that include a trench structure integrated therein. In an implementation, the light sensor includes a substrate having a dopant material of a first conductivity type and multiple trenches disposed therein. The light sensor also includes a diffusion region formed proximate to the multiple trenches. The diffusion region includes a dopant material of a second conductivity type. A depletion region is created at the interface of the dopant material of the first conductivity type and the dopant material of the second conductivity type. The depletion region is configured to attract charge carriers to the depletion region, at least substantially a majority of the charge carriers generated due to light incident upon the substrate.
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