Photodetector structures and manufacturing the same
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United States of America Patent
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Jan 30, 2018
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app pub date -
Jun 10, 2016
filing date -
Jun 10, 2016
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Abstract
A photodetector structure comprises a semiconductor substrate extending substantially along a horizontal plane and having a bulk refractive index and a front surface defining a front side of the photodetector structure. The front surface comprises high aspect ratio nanostructures forming an optical conversion layer having an effective refractive index gradually changing towards the bulk refractive index to reduce reflection of light incident on the photodetector structure from the front side thereof. Further, the semiconductor substrate comprises an induced junction.
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