Semiconductor device and manufacturing method thereof
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 30, 2018
Issued Date -
N/A
app pub date -
Mar 15, 2016
filing date -
Mar 17, 2015
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A transistor with favorable electrical characteristics is provided. A minute transistor is provided. Provided is a semiconductor device including a first insulator over a substrate, a second insulator over the first insulator, a semiconductor over the second insulator, a first conductor and a second conductor over the semiconductor, a third insulator over the semiconductor, a fourth insulator over the third insulator, a third conductor over the fourth insulator, and a fifth insulator over the first insulator, the first conductor, and the second conductor. In the semiconductor device, the second insulator and the third insulator each include at least one element other than oxygen included in the semiconductor, respectively, and the semiconductor includes a region having a carbon concentration of 3×1018 atoms/cm3 or lower.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
SEMICONDUCTOR ENERGY LABORATORY CO LTD | KANAGAWA KANAGAWA |
International Classification(s)

- 2016 Application Filing Year
- H01L Class
- 27971 Applications Filed
- 23507 Patents Issued To-Date
- 84.05 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Hamada, Takashi | Kanagawa, JP | 110 | 1272 |
# of filed Patents : 110 Total Citations : 1272 | |||
Toriumi, Satoshi | Kanagawa, JP | 63 | 763 |
# of filed Patents : 63 Total Citations : 763 | |||
Yamazaki, Shunpei | Tokyo, JP | 7526 | 239327 |
# of filed Patents : 7526 Total Citations : 239327 |
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Patent Citation Ranking
- 5 Citation Count
- H01L Class
- 23.71 % this patent is cited more than
- 7 Age
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