Molded dielectric fin-based nanostructure
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 30, 2018
Issued Date -
N/A
app pub date -
Dec 23, 2013
filing date -
Dec 23, 2013
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
An embodiment concerns selective etching of a structure (e.g., a fin) to form a void with the shape of the original structure. This void then functions as a mold. Flowable dielectric material fills the void to form the same shape as the original structure/mold. Post-processing then occurs (e.g., oxidation build up and annealing) to harden the dielectric in the void. The resulting product is a molded dielectric nanostructure that has the same shape as the original structure but consists of a different material (e.g., dielectric instead of silicon). Other embodiments are described herein.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully