Fin field effect transistors (FETs) (FinFETs) employing dielectric material layers to apply stress to channel regions
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United States of America Patent
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Dec 26, 2017
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app pub date -
Sep 15, 2016
filing date -
Sep 15, 2016
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Abstract
Fin Field Effect transistors (FETs) (FinFETs) employing dielectric material layers to apply stress to channel regions are disclosed. In one aspect, a FinFET is provided that includes a substrate and a Fin disposed over the substrate. The Fin includes a source, a drain, and a channel region between the source and drain. A gate is disposed around the channel region. To apply stress to the channel region, a first dielectric material layer is disposed over the substrate and adjacent to one side of the Fin. A second dielectric material layer is disposed over the substrate and adjacent to another side of the Fin. The dielectric material layers apply stress along the Fin, including the channel region. The level of stress applied by the dielectric material layers is not dependent on the volume of each layer.
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