Vertical conduction integrated electronic device protected against the latch-up and relating manufacturing process
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United States of America Patent
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Jan 30, 2018
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app pub date -
May 26, 2017
filing date -
Sep 30, 2015
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Abstract
A vertical conduction integrated electronic device including: a semiconductor body; a trench that extends through part of the semiconductor body and delimits a portion of the semiconductor body, which forms a first conduction region having a first type of conductivity and a body region having a second type of conductivity, which overlies the first conduction region; a gate region of conductive material, which extends within the trench; an insulation region of dielectric material, which extends within the trench and is arranged between the gate region and the body region; and a second conduction region, which overlies the body region. The second conduction region is formed by a conductor.
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