Edge termination for super-junction MOSFETs
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United States of America Patent
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Jan 30, 2018
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app pub date -
Aug 19, 2015
filing date -
Aug 19, 2014
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Abstract
Edge termination for super-junction MOSFETs. In accordance with an embodiment of the present invention, a super-junction metal oxide semiconductor field effect transistor (MOSFET) includes a core super-junction region including a plurality of parallel core plates coupled to a source terminal of the super-junction MOSFET. The super-junction MOSFET also includes a termination region surrounding the core super-junction region comprising a plurality of separated floating termination segments configured to force breakdown into the core super-junction region and not in the termination region. Each termination segment has a length dimension less than a length dimension of the core plates.
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