Group 13 nitride composite substrate semiconductor device, and method for manufacturing group 13 nitride composite substrate
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 30, 2018
Grant Date -
Jul 2, 2015
app pub date -
Mar 13, 2015
filing date -
Jun 6, 2013
priority date (Note) -
In Force
status (Latency Note)
Importance
|
US Family Size
|
Non-US Coverage
|
|
Patent Longevity
|
Forward Citations
|
Abstract
Provided are a group 13 nitride composite substrate allowing for the production of a semiconductor device suitable for high-frequency applications while including a conductive GaN substrate, and a semiconductor device produced using this substrate. The group 13 nitride composite substrate includes a base material of an n-conductivity type formed of GaN, a base layer located on the base material, being a group 13 nitride layer having a resistivity of 1×106 Ω·cm or more, a channel layer located on the base layer, being a GaN layer having a total impurity density of 1×1017/cm3 or less, and a barrier layer that is located on the channel layer and is formed of a group 13 nitride having a composition AlxInyGa1−x−yN (0≦x≦1, 0≦y≦1).
First Claim
Other Claims data not available
Family
| Country | kind | publication No. | Filing Date | Type | Sub-Type |
|---|
International Classification(s)
- 2015 Application Filing Year
- H01L Class
- 25498 Applications Filed
- 22451 Patents Issued To-Date
- 88.06 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 1 Citation Count
- H01L Class
- 23.71 % this patent is cited more than
- 7 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Jul 30, 2025 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Jul 30, 2029 |
