Group 13 nitride composite substrate semiconductor device, and method for manufacturing group 13 nitride composite substrate
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United States of America Patent
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Jan 30, 2018
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Jul 2, 2015
app pub date -
Mar 13, 2015
filing date -
Jun 6, 2013
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Abstract
Provided are a group 13 nitride composite substrate allowing for the production of a semiconductor device suitable for high-frequency applications while including a conductive GaN substrate, and a semiconductor device produced using this substrate. The group 13 nitride composite substrate includes a base material of an n-conductivity type formed of GaN, a base layer located on the base material, being a group 13 nitride layer having a resistivity of 1×106 Ω·cm or more, a channel layer located on the base layer, being a GaN layer having a total impurity density of 1×1017/cm3 or less, and a barrier layer that is located on the channel layer and is formed of a group 13 nitride having a composition AlxInyGa1−x−yN (0≦x≦1, 0≦y≦1).
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