Method for manufacturing a HEMT transistor and HEMT transistor with improved electron mobility
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United States of America Patent
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Jan 30, 2018
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May 17, 2016
filing date -
Nov 12, 2015
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Abstract
A method for manufacturing a HEMT transistor comprising the steps of: providing a wafer comprising a semiconductor body including a heterojunction structure formed by semiconductor materials that include elements of Groups III-V of the Periodic Table, and a dielectric layer on the semiconductor body; etching selective portions of the wafer, thus exposing a portion of the heterojunction structure; forming an interface layer by a surface reconstruction process, of a semiconductor compound formed by elements of Groups III-V of the Periodic Table, in the exposed portion of the heterojunction structure; and forming a gate electrode, including a gate dielectric and a gate conductive region, on said interface layer.
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